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n-channel enhancement mode mosfet copyright ? anpec electronics corp. rev. b.3 - mar., 2008 www.anpec.com.tw 1 anpec reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. apm2023nu pin description ordering and marking information features applications 20v/30a, r ds(on) =17m w (typ.) @ v gs =10v r ds(on) =20m w (typ.) @ v gs =4.5v r ds(on) =30m w (typ.) @ v gs =2.5v super high dense cell design reliable and rugged lead free and green devices available (rohs compliant) power management in desktop computer or dc/dc converters top view of to-252 n-channel mosfet gd s g s d apm2023n handling code temp. range package code package code u : to-252 operating junction temp. range c : -55 to 150 c handling code tr : tape & reel assembly material l : lead free device g : halogen and lead free device apm2023n u : apm2023n xxxxx xxxxx - date code assembly material o note: anpec lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina- tion finish; which are fully compliant with rohs. anpec lead-free products meet or exceed the lead-free requirements of ipc/jedec j - std-020c for msl classification at lead-free peak reflow temperature. anpec defines green to mean lead-free (rohs compliant) and halogen free (br or cl does not exceed 900ppm by weight in homogeneous material and total of br and cl does not exceed 1500ppm by weight).
copyright ? anpec electronics corp. rev. b.3 - mar., 2008 www.anpec.com.tw 2 apm2023nu absolute maximum ratings symbol parameter rating unit common ratings (t a =25 c unless otherwise noted) v dss drain-source voltage 20 v gss gate-source voltage 12 v t j maximum junction temperature 150 c t stg storage temperature range -55 to 150 c i s diode continuous forward current t c =25 c 2 a mounted on large heat sink t c =25 c 100 i dp 300 s pulse drain current tested t c =100 c 75 a t c =25 c 30* i d continuous drain current t c =100 c 20 a t c =25 c 50 p d maximum power dissipation t c =100 c 20 w r q jc thermal resistance-junction to case 2.5 c/w mounted on pcb of 1in 2 pad area t a =25 c 100 i dp 300 s pulse drain current tested t a =100 c 75 a t a =25 c 9 i d continuous drain current t a =100 c 6 a t a =25 c 2.5 p d maximum power dissipation t a =100 c 1 w r q ja thermal resistance-junction to ambient 50 c/w mounted on pcb of minimum footprint t a =25 c 100 i dp 300 s pulse drain current tested t a =100 c 75 a t a =25 c 7 i d continuous drain current t a =100 c 5 a t a =25 c 1.6 p d maximum power dissipation t a =100 c 0.6 w r q ja thermal resistance-junction to ambient 75 c/w note: * current limited by bond wire.
copyright ? anpec electronics corp. rev. b.3 - mar., 2008 www.anpec.com.tw 3 apm2023nu electrical characteristics (t a = 25 c unless otherwise noted) apm2023nu symbol parameter test condition min. typ. max. unit static characteristics bv dss drain-source breakdown voltage v gs =0v, i ds =250 m a 20 v i dss zero gate voltage drain current v ds =16v, v gs =0v 1 m a v gs(th) gate threshold voltage v ds =v gs , i ds =250 m a 0.45 0.7 1 v i gss gate leakage current v gs = 10v, v ds =0v 100 na v gs =10v, i ds =12.8a 17 20 v gs =4.5v, i ds =12.8a 20 23 r ds(on) a drain-source on-state resistance v gs =2.5v, i ds =6.6a 30 40 m w diode characteristics v sd a diode forward voltage i sd =0.5a, v gs =0v 0.8 1.3 v dynamic characteristics b r g gate resistance v gs =0v,v ds =0v,f=1mhz 1.2 w c iss input capacitance 450 c oss output capacitance 100 c rss reverse transfer capacitance v gs =0v, v ds =15v, frequency=1.0mhz 60 pf t d(on) turn-on delay time 25 47 t r turn-on rise time 21 42 t d(off) turn-off delay time 65 120 t f turn-off fall time v dd =10v, r l =10 w , i ds =1a, v gen =4.5v, r g =6 w 35 65 ns gate charge characteristics b q g total gate charge 15 18 q gs gate-source charge 5.4 q gd gate-drain charge v ds =10v, v gs =4.5v, i ds =12.8a 3 nc notes: a : pulse test ; pulse width 300 m s, duty cycle 2%. b : guaranteed by design, not subject to production testing.
copyright ? anpec electronics corp. rev. b.3 - mar., 2008 www.anpec.com.tw 4 apm2023nu 1e-41e-30.010.1110100 0.01 0.1 1 2 mounted on 1in 2 pad r q ja :50 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 typical characteristics power dissipation p t o t - p o w e r ( w ) t j - junction temperature ( c) i d - d r a i n c u r r e n t ( a ) drain current t j - junction temperature ( c) safe operation area v ds - drain - source voltage (v) i d - d r a i n c u r r e n t ( a ) n o r m a l i z e d t r a n s i e n t t h e r m a l r e s i s t a n c e thermal transient impedance square wave pulse duration (sec) 020406080100120140160180 0 10 20 30 40 50 60 t c =25 o c 020406080100120140160180 0 5 10 15 20 25 30 35 t c =25 o c,v g =10v 0.010.1110100 0.1 1 10 100 200 10ms r d s ( o n ) l i m i t 1s t c =25 o c 1ms 100ms dc
copyright ? anpec electronics corp. rev. b.3 - mar., 2008 www.anpec.com.tw 5 apm2023nu v ds - drain-source voltage (v) i d - d r a i n c u r r e n t ( a ) output characteristics r d s ( o n ) - o n - r e s i s t a n c e ( m w ) drain-source on resistance i d - drain current (a) transfer characteristics v gs - gate - source voltage (v) i d - d r a i n c u r r e n t ( a ) t j - junction temperature ( c) gate threshold voltage n o r m a l i z e d t h r e s h o l d v l o t a g e typical characteristics (cont.) 051015202530 0 5 10 15 20 25 30 35 40 45 50 v gs =10v v gs =4.5v v gs =2.5v -50-250255075100125150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 m a 0.00.40.81.21.62.0 0 0 5 10 15 20 25 30 2v v gs =3,4,5,6,7,8,9,10v 0.00.51.01.52.02.53.0 0 5 10 15 20 25 30 t j =125 o c t j =25 o c t j =-55 o c
copyright ? anpec electronics corp. rev. b.3 - mar., 2008 www.anpec.com.tw 6 apm2023nu drain-source on resistance n o r m a l i z e d o n r e s i s t a n c e t j - junction temperature ( c) v sd - source-drain voltage (v) source-drain diode forward i s - s o u r c e c u r r e n t ( a ) v ds - drain - source voltage (v) c - c a p a c i t a n c e ( p f ) capacitancegate charge q g - gate charge (nc) v g s - g a t e - s o u r c e v o l t a g e ( v ) typical characteristics (cont.) -50-250255075100125150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 r on @t j =25 o c: 17m w v gs = 10v i ds = 12.8a 0.00.20.40.60.81.01.21.41.61.8 0.1 1 10 30 t j =150 o c t j =25 o c 048121620 0 100 200 300 400 500 600 700 frequency=1mhz crss coss ciss 0369121518 0 1 2 3 4 5 v ds =10v i d = 12.8a
copyright ? anpec electronics corp. rev. b.3 - mar., 2008 www.anpec.com.tw 7 apm2023nu avalanche test circuit and waveforms switching time test circuit and waveforms t d (on) t r t d (off) t f v gs v ds 90% 10% e as v dd t av i as v ds t p v dsx(sus) v dd r d dut v gs v ds r g tp dut 0.01 w tp v dd v ds l i l r g
copyright ? anpec electronics corp. rev. b.3 - mar., 2008 www.anpec.com.tw 8 apm2023nu to-252 package information s y m b o l min.max. 2.39 4.955.46 0.460.61 0.13 5.33 a a1 b3 c c2 d d1 e millimeters b 0.500.89 2.29 bsc to-252 4.57 6.356.73 6.22 0.090 bsc min.max. inches 0.094 0.0200.035 0.1950.215 0.0180.024 0.210 0.180 0.2500.265 2.18 0.245 0.086 0.005 e1 0.035 0.070 0.410 l3 h l e 9.40 0.90 0.46 0.89 1.78 10.41 0.370 0.035 0.018 0.040 l4 1.02 0.150 3.81 0.892.03 0.0350.080 0 8 0 8 0 0 0 . 2 5 gauge plane l a 1 view a seating plane l 4 l 3 d e e b3 h a see view a c2 b c e1 d 1 6.00 note : follow jedec to-252 . 6.00 0.235 0.235
copyright ? anpec electronics corp. rev. b.3 - mar., 2008 www.anpec.com.tw 9 apm2023nu carrier tape & reel dimensions package type unit quantity to- 252 tape & reel 2500 devices per unit application a h t1 c d d w e1 f 330.0 2.00 50 min. 16.4+2.00 -0.00 13.0+0.50 -0.20 1.5 min. 20.2 min. 16.0 0.30 1.75 0.10 7.50 0.05 p0 p1 p2 d0 d1 t a0 b0 k0 to-252 4.0 0.10 8.0 0.10 2.0 0.05 1.5+0.10 -0.00 1.5 min. 0.6+0.00 -0.40 6.80 0.20 10.40 0.20 2.50 0.20 (mm) h t1 a d a e 1 a b w f t p0 od0 b a0 p2 k0 b 0 section b-b section a-a od1 p1
copyright ? anpec electronics corp. rev. b.3 - mar., 2008 www.anpec.com.tw 10 apm2023nu test item method description solderability mil-std-883d-2003 245 c, 5 sec holt mil-std-883d-1005.7 1000 hrs bias @125 c pct jesd-22-b, a102 168 hrs, 100 % rh, 121 c tst mil-std-883d-1011.9 -65 c~150 c, 200 cycles reflow condition (ir/convection or vpr reflow) classification reflow profiles profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: - temperature (t l ) - time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak/classification temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10-30 seconds 20-40 seconds ramp-down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note: all temperatures refer to topside of the package. measured on the body surface. reliability test program t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 t e m p e r a t u r e time critical zone t l to t p
copyright ? anpec electronics corp. rev. b.3 - mar., 2008 www.anpec.com.tw 11 apm2023nu table 2. pb-free process C package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350-2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm C 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 3 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. table 1. snpb eutectic process C package peak reflow temperatures package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 240 +0/-5 c 225 +0/-5 c 3 2.5 mm 225 +0/-5 c 225 +0/-5 c classification reflow profiles (cont.) customer service anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 2f, no. 11, lane 218, sec 2 jhongsing rd., sindain city, taipei county 23146, taiwan tel : 886-2-2910-3838 fax : 886-2-2917-3838

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